VBM1151N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 150V | 20(±V) | 3V | 100A | 9 (mΩ) | Trench |
Brand: VBsemi
parameter:
- Single crystal N-channel field effect transistor
- Rated drain-source voltage (VDS): 150V
- Rated gate-source voltage (VGS)(㊣V): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 9
- Maximum drain current (ID): 100A
- Technology: Trench
Package: TO220
Domain and module applications:
1. Power module:
The VBM1151N FET has a rated drain-source voltage of 150V and a maximum drain current of 100A, making it suitable for use in a variety of power modules, including DC-DC converters and AC-DC converters. It can provide stable and reliable power conversion functions in industrial equipment, automotive electronics and communication equipment.
2. Automotive electronic control module:
Due to its high-performance characteristics and reliability, the VBM1151N FET is ideally suited for use in automotive electronic control modules such as engine control units (ECUs) and electric vehicle battery management systems (BMS). It can provide efficient power management and precise current control to ensure the stability and safety of vehicle systems.
3. Industrial automation module:
The product's Trench technology and low drain resistance make it ideal for use in industrial automation modules such as PLC controllers and industrial robots. It provides reliable current transmission and fast response speed to meet the high requirements in industrial environments.
4. LED lighting driver module:
VBM1151N field effect transistor can also be used in LED lighting drive modules, such as LED drive power supplies and lighting controllers. It can provide stable voltage output and efficient energy conversion to ensure long-term stable operation of the LED lighting system.
Technical support:
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