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VBM11518 Product details

Product introduction:

VBM11518 is a single N-type power field effect transistor launched by the VBsemi brand, which is suitable for various high-voltage and high-power power applications. The product features high rated drain-source voltage and rated drain current, as well as low threshold voltage and drain-source resistance, providing stable and reliable performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 150V 20(±V) 3V 70A 16 (mΩ) Trench
parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 150V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 16
- Rated drain current (ID): 70A
- Technology: Trench
Package: TO220

Domain and module applications:

for example:
1. Industrial power module: VBM11518 is suitable for switching power supplies and inverters in industrial power modules to provide stable power output and support the operation of various industrial equipment.
2. High-voltage power module: Due to its high rated drain-source voltage, VBM11518 can be used in high-voltage power modules, such as medical equipment, radar systems and other applications that require high-voltage stable power supply.
3. Automotive electronic modules: In the field of automotive electronics, VBM11518 can be used in modules such as vehicle chargers and electric vehicle battery management systems to provide high-power power conversion and management functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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