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VBM112MR04 Product details

Product introduction:

Product introduction:
VBM112MR04 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. With high voltage tolerance and stability, it can provide reliable performance in different application scenarios.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 1200V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.5V.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 3500 mΩ.
- ID (A): Maximum drain current is 4A.
- Technology: Using Plannar technology.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 1200V 30(±V) 3.5V 4A 3500 (mΩ) Plannar
Product model: VBM112MR04
Brand: VBsemi
Parameters: Single N
VDS(V): 1200
VGS(㊣V): 30
Vth(V): 3.5
VGS=10V(m次): 3500
ID(A): 4
Technology: Planner
Package: TO220

Domain and module applications:




Examples of applicable fields and modules:
1. Industrial power supply: VBM112MR04 can be used in inverters and power management modules in industrial power supplies to achieve efficient power conversion and stable power output.
2. Solar power generation: Due to its high voltage tolerance and reliability, this model is suitable for inverter modules in solar power generation systems to convert solar energy into electrical energy.
3. High-performance electric vehicles: In the field of electric vehicles, VBM112MR04 can be used as a driver module for electric vehicles, providing efficient power output and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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