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VBM1103 Product details

Product introduction:

VBM1103 is a single N-type field effect transistor (FET) launched by VBsemi, which adopts Trench technology and has high performance and reliability. It is suitable for various high-power power management and power control applications, providing reliable power conversion and stable current driving capabilities. Such as industrial power supply, electric vehicle charger, industrial high-frequency power supply, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 20(±V) 3V 180A 3 (mΩ) Trench
**parameter:**
- **Type:** Single N type
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** 3V
- **On-resistance (m次) at VGS=10V:** 3m次
- **Maximum drain current (ID):** 180A
- **Technology:** Trench
- **Package:** TO220

Domain and module applications:

**Examples of application areas:**
1. **Power Inverter:** VBM1103 can be used to manufacture high-power power inverter to convert DC power into AC power, suitable for industrial power supply, UPS (uninterruptible power supply) and other applications.
2. **Electric vehicle charger:** In an electric vehicle charger, this transistor can be used to control the charger's current and voltage output, enabling fast charging and efficient energy conversion.
3. **Industrial high-frequency power module:** In industrial high-frequency power module, VBM1103 can be used as a switching tube to achieve high-frequency power conversion and stable output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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