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VBL18R17S Product details

Product introduction:

Product introduction:
VBsemi's VBL18R17S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 800V 30(±V) 3.5V 17A 220(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 17A

Domain and module applications:

Examples of applicable fields and modules of this product:
1. High-voltage DC regulator: The high drain-source voltage and high current characteristics of VBL18R17S make it suitable for high-voltage DC regulator modules for stable power output in industrial and power systems.
2. High-efficiency power module: In fields such as communications and data centers, VBL18R17S can be used as a power switch for high-efficiency power modules to achieve efficient energy conversion and low power consumption.
3. Medical equipment: Due to its stability and reliability, VBL18R17S can be used in medical equipment modules, such as X-ray generators and medical ultrasound machines, to provide stable power supply and high-quality signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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