VBL18R17S Product details
Product introduction:
VBsemi's VBL18R17S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 30(±V) | 3.5V | 17A | 220(mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 17A
Domain and module applications:
1. High-voltage DC regulator: The high drain-source voltage and high current characteristics of VBL18R17S make it suitable for high-voltage DC regulator modules for stable power output in industrial and power systems.
2. High-efficiency power module: In fields such as communications and data centers, VBL18R17S can be used as a power switch for high-efficiency power modules to achieve efficient energy conversion and low power consumption.
3. Medical equipment: Due to its stability and reliability, VBL18R17S can be used in medical equipment modules, such as X-ray generators and medical ultrasound machines, to provide stable power supply and high-quality signal processing.
Technical support:
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