VBL185R07 Product details
Product introduction:
VBL185R07 is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 850V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.3V. It adopts Plannar technology and is packaged as TO263. The product's high voltage tolerance and low on-resistance make it suitable for a variety of high-performance applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 850V | 30(±V) | 3.3V | 7A | 1800 (mΩ) | Plannar |
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.3V
- On-resistance (m次) at VGS=10V: 1800m次
- Maximum drain current (ID): 7A
- Technology: Plannar
-Package: TO263
Domain and module applications:
1. Solar photovoltaic inverter: Due to its high drain-source voltage and low on-resistance, VBL185R07 can be used in power switches and inverter circuits in solar photovoltaic inverters to improve energy conversion efficiency.
2. Electric vehicle charging piles: Suitable for power switches and control circuits in electric vehicle charging piles to achieve efficient and fast charging.
3. Industrial high-frequency power module: Among industrial high-frequency power modules, this product can be used in switching power supplies and DC-AC converters to meet the needs of industrial equipment for stable power.
4. Medical equipment power supply: In medical equipment, VBL185R07 can be used in high-performance power modules to ensure the safe and reliable operation of medical equipment.
Technical support:
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