VBL185R06 Product details
Product introduction:
VBsemi's VBL185R06 model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 850V, a drain current (ID) of 6A, and a threshold voltage (Vth) of 3.3V. It adopts Plannar technology and is packaged as TO263. This MOSFET is suitable for high voltage and high power applications and has high drain current handling capability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 850V | 30(±V) | 3.3V | 6A | 2400 (mΩ) | Plannar |
- Product model: VBL185R06
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.3V
- On-resistance (m次) at VGS=10V: 2400
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO263
Domain and module applications:
1. Power inverter: VBL185R06 can be used in power inverter modules such as solar inverters and wind energy inverters to convert DC power to AC power and provide stable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-voltage and high-power power switching devices are required to control and regulate the charging process. VBL185R06 can be used as a switching element.
3. Industrial control system: In industrial control systems, power devices that can withstand high voltage and high current are required. VBL185R06 can be used for power management and switch control in various industrial control modules.
Technical support:
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