VBL16R20S Product details
Product introduction:
VBsemi's VBL16R20S is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 20A | 190 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 190
- Maximum drain current (ID): 20A
Domain and module applications:
- Low-power power module: Suitable for power switches and power control in low-power power modules, such as small home appliances, consumer electronics, etc.
- Lighting controller: used for switching power supply and current control in LED lighting systems to achieve efficient lighting control and energy saving.
- Medical equipment: In medical equipment, it can be used as a switching tube to achieve power management and equipment control to ensure the stability and safety of the equipment.
- Smart home system: Suitable for power management and device control in smart home systems, such as smart sockets, smart switches, etc., to enhance the intelligence and convenience of home life.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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