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VBL16R20S Product details

Product introduction:

Product introduction:

VBsemi's VBL16R20S is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 30(±V) 3.5V 20A 190 (mΩ) SJ_Multi-EPI
Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 190
- Maximum drain current (ID): 20A

Domain and module applications:

Examples of applicable fields and modules:

- Low-power power module: Suitable for power switches and power control in low-power power modules, such as small home appliances, consumer electronics, etc.
- Lighting controller: used for switching power supply and current control in LED lighting systems to achieve efficient lighting control and energy saving.
- Medical equipment: In medical equipment, it can be used as a switching tube to achieve power management and equipment control to ensure the stability and safety of the equipment.
- Smart home system: Suitable for power management and device control in smart home systems, such as smart sockets, smart switches, etc., to enhance the intelligence and convenience of home life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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