VBL16R11SE Product details
Product introduction:
VBL16R11SE is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Deep-Trench technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 11A | 310(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 310m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
Domain and module applications:
- Power module: VBL16R11SE is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- LED driver: As a key component in LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Electric vehicle controller: Due to its high voltage and high current characteristics, VBL16R11SE is suitable for power switches and inverters in electric vehicle controllers, which can effectively drive electric motors and achieve energy conversion.
- Industrial Automation: In the field of industrial automation, the device can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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