VBL16R10S Product details
Product introduction:
VBsemi's VBL16R10S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Multi-EPI technology and packaged in TO263, which is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 10A | 450 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 450
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
1. Power converter: Due to its stability and reliability, it can be used in the design of various power converters and inverters.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial control system: It can be used as a switching device in industrial control systems to achieve efficient motor control and regulation.
4. Solar inverter: Due to its high voltage tolerance and reliability, it can be used in the design of solar inverters to realize the conversion and utilization of solar energy.
These are just some examples, actual application depends on specific design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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