VBL16R08SE Product details
Product introduction:
VBL16R08SE is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 8A. Manufactured using SJ_Deep-Trench technology and packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 8A | 460(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 460
- Drain current (ID): 8A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Power management: VBL16R08SE can be used in various types of power management circuits, including switching power supplies, DC-DC converters and inverters, and is suitable for industrial equipment, communication equipment, household appliances and other fields.
2. Power tool control: As a key component in power tools, this type of MOSFET can be used for motor control of power tools to achieve efficient power transmission and driving.
3. LED lighting driver: In LED lighting systems, VBL16R08SE can be used for power conversion and regulation in LED drivers to ensure stable brightness and long life of LED lamps.
4. Automotive electronic systems: used in power management, drive control and motor control modules in automotive electronic systems to improve the performance and reliability of automotive electronic systems.
Technical support:
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