VBL16R07S Product details
Product introduction:
VBsemi's VBL16R07S is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 7A. It adopts SJ_Multi-EPI technology and is packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 7A | 650 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 650
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications:
1. Power inverter module: Because VBL16R07S has a high drain-source voltage and low on-resistance, it is suitable for the design of power inverter modules, such as solar inverters, industrial inverters, etc.
2. Electric vehicle charging piles: Its high withstand voltage and moderate drain current characteristics make it suitable for the power switch module of electric vehicle charging piles.
3. LED lighting driver: Since the TO263 package is suitable for high power density applications, VBL16R07S can be used as the power switch module of the LED lighting driver, providing high efficiency and reliability.
Technical support:
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