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VBL16R07S Product details

Product introduction:

Product introduction:
VBsemi's VBL16R07S is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 7A. It adopts SJ_Multi-EPI technology and is packaged as TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 30(±V) 3.5V 7A 650 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 650
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO263

Domain and module applications:

Examples of application areas and modules:
1. Power inverter module: Because VBL16R07S has a high drain-source voltage and low on-resistance, it is suitable for the design of power inverter modules, such as solar inverters, industrial inverters, etc.
2. Electric vehicle charging piles: Its high withstand voltage and moderate drain current characteristics make it suitable for the power switch module of electric vehicle charging piles.
3. LED lighting driver: Since the TO263 package is suitable for high power density applications, VBL16R07S can be used as the power switch module of the LED lighting driver, providing high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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