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VBL16R01 Product details

Product introduction:

Product introduction:
VBL16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 30(±V) 3.5V 1A 6500 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 6500m次
- Maximum drain current (ID): 1A
- Technology: Plannar

Domain and module applications:

Application example:
- Low power power module: VBL16R01 is suitable for low power power modules, such as small switching power supplies and inverters, which can be used in home electronic equipment, LED lighting, etc.
- Signal Processors: Due to its low drain current and high drain-source resistance, this device is suitable for use in power switches and amplifiers in signal processors.
- Power tools: In power tools, the VBL16R01 can be used to drive low-power motors and perform control tasks such as speed regulation and reverse control.
- Communication equipment: This device can be used for power management and signal conditioning in communication equipment, such as small wireless routers and communication modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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