VBL16R01 Product details
Product introduction:
VBL16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 1A | 6500 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 6500m次
- Maximum drain current (ID): 1A
- Technology: Plannar
Domain and module applications:
- Low power power module: VBL16R01 is suitable for low power power modules, such as small switching power supplies and inverters, which can be used in home electronic equipment, LED lighting, etc.
- Signal Processors: Due to its low drain current and high drain-source resistance, this device is suitable for use in power switches and amplifiers in signal processors.
- Power tools: In power tools, the VBL16R01 can be used to drive low-power motors and perform control tasks such as speed regulation and reverse control.
- Communication equipment: This device can be used for power management and signal conditioning in communication equipment, such as small wireless routers and communication modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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