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VBL165R22 Product details

Product introduction:

Product introduction:
VBsemi's VBL165R22 is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using planar technology and packaged in TO263, it has excellent performance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 30(±V) 3.5V 22A 280 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280m次
- Maximum drain current (ID): 22A
- Technology: Flat
-Package:TO263

Domain and module applications:

Examples of applicable fields and modules:
1. Power module: VBL165R22 can be used in power modules such as switching power supplies, inverters and chargers to achieve high efficiency and reliability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as drive control of electric vehicles and power conversion of charging piles.
3. Industrial automation: suitable for industrial motor drives, frequency converters, industrial control equipment and other fields, providing high-performance power switching solutions.
4. LED lighting: In LED drive circuits, this MOSFET can be used in power factor correction (PFC) circuits and LED drive power supplies to improve efficiency and stability.

These are just some examples, actual application depends on specific design needs and system requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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