VBL165R22 Product details
Product introduction:
VBsemi's VBL165R22 is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using planar technology and packaged in TO263, it has excellent performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 30(±V) | 3.5V | 22A | 280 (mΩ) | Plannar |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280m次
- Maximum drain current (ID): 22A
- Technology: Flat
-Package:TO263
Domain and module applications:
1. Power module: VBL165R22 can be used in power modules such as switching power supplies, inverters and chargers to achieve high efficiency and reliability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as drive control of electric vehicles and power conversion of charging piles.
3. Industrial automation: suitable for industrial motor drives, frequency converters, industrial control equipment and other fields, providing high-performance power switching solutions.
4. LED lighting: In LED drive circuits, this MOSFET can be used in power factor correction (PFC) circuits and LED drive power supplies to improve efficiency and stability.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
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