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VBL165R15SE Product details

Product introduction:

Product introduction: VBsemi's VBL165R15SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. Its package is TO263, which has efficient power handling capabilities and stable and reliable performance. Suitable for a variety of application scenarios requiring a single N-channel FET.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 30(±V) 3.5V 15A 220(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 220m次, and the maximum drain current (ID) is 15A.

Domain and module applications:

Applicable areas and modules:
1. Industrial Electronics: Suitable for high-efficiency industrial power converters, inverters and motor drives.
2. Solar energy and renewable energy: Can be used in energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
3. Electric vehicles: Motor control and battery management systems for electric vehicles to provide efficient power output.
4. Communication equipment: suitable for high-voltage power management modules in communication base stations, radio frequency power amplifiers and radar systems.
5. Medical equipment: It can be used in high-voltage power supply control modules such as medical imaging equipment, X-ray generators and CT scanners.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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