VBL155R01 Product details
Product introduction:
- This product is a single N-type field effect transistor, suitable for low power applications.
- With higher rated drain-source voltage (VDS) and higher on-resistance, it is suitable for applications requiring higher voltage and low power.
- Technically adopts Plannar structure to improve performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 550V | 30(±V) | 3.5V | 1A | 6500 (mΩ) | Plannar |
- Type: Single N type
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 6500
- Maximum drain current (ID): 1A
- Technology: Plannar
Package: TO263
Domain and module applications:
- Application areas:
- Low power supply
- signal amplifier
- Control circuit
- Sensor interface
- Low power switching circuit
for example:
1. Low power power module: used for power supply of various small electronic devices, such as portable devices, smart home devices, etc.
2. Signal amplifier module: circuit used for signal amplification and processing, such as audio amplifier, video amplifier, etc.
3. Control circuit module: used in various control circuits, such as motor control, lighting control, etc., to provide reliable switching functions.
4. Sensor interface module: used for the interface circuit between the sensor and the microcontroller to realize the collection and processing of sensor data.
5. Low-power switching circuit module: used in low-power switching circuits, such as power management, signal switching and other applications, to provide stable switching performance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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