Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
30V |
20（±V） |
1.7V |
50A |
|
18 (mΩ) |
12 (mΩ) |
Trench |
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 18
- Drain-source on-resistance (m次) at VGS=10V: 12
- Maximum drain current (ID): 50A
- Technology: Trench (groove type)
Package: TO263
Domain and module applications：
for example:
1. **Electric vehicles**: VBL1310 can be used as a switching tube for motor drivers in electric vehicles to control the start, stop and speed adjustment of the motor. Due to its high drain current and low on-resistance characteristics, it is suitable for high-power drive systems in electric vehicles.
2. **Industrial power supply**: In industrial power supply, VBL1310 can be used as a switching tube in a DC-DC converter to adjust the power supply stability and efficiency of industrial equipment. Its high power and low voltage drop characteristics improve power system performance and reliability.
3. **Solar Inverter**: VBL1310 can be used as a switching tube in a solar inverter to convert the DC power generated by the solar panel into AC power. Its high drain current and low voltage drop characteristics help improve the conversion efficiency and stability of the inverter and reduce energy loss.
To sum up, the VBL1310 field effect transistor is suitable for high power and current applications, such as applications in electric vehicles, industrial power supplies, and solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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