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VBKB5245 Product details
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Product introduction:
VBsemi VBKB5245 is a dual N+P type field effect transistor with bidirectional conductivity and is suitable for various circuit designs. The product has an operating voltage range of ±20V and is manufactured using Trench technology, which features low on-resistance and stable performance. The package form is SC70-8, which is suitable for small electronic equipment and compact spaces. VBKB5245 belongs to the product series of VBsemi brand and is designed to meet a variety of circuit needs.
The application of VBKB5245 in a variety of fields and modules provides flexible power control and signal conditioning functions for electronic devices.
VBsemi VBKB5245 is a dual N+P type field effect transistor with bidirectional conductivity and is suitable for various circuit designs. The product has an operating voltage range of ±20V and is manufactured using Trench technology, which features low on-resistance and stable performance. The package form is SC70-8, which is suitable for small electronic equipment and compact spaces. VBKB5245 belongs to the product series of VBsemi brand and is designed to meet a variety of circuit needs.
The application of VBKB5245 in a variety of fields and modules provides flexible power control and signal conditioning functions for electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC70-8 | Dual-N+P | ±20V | 20（±V） | 1.0/-1.2V | 4/-2A | 2/23(mΩ) | 2/14(mΩ) | Trench |
Detailed parameter description:
- Drain-source voltage (VDS): ㊣20V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.0V (N type), -1.2V (P type)
- Drain-source resistance (m次) when VGS=4.5V: 2 (N type), 23 (P type)
- Drain-source resistance (m次) when VGS=10V: 2 (N type), 14 (P type)
- Maximum drain current (ID): 4A (N type), -2A (P type)
- Drain-source voltage (VDS): ㊣20V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.0V (N type), -1.2V (P type)
- Drain-source resistance (m次) when VGS=4.5V: 2 (N type), 23 (P type)
- Drain-source resistance (m次) when VGS=10V: 2 (N type), 14 (P type)
- Maximum drain current (ID): 4A (N type), -2A (P type)
Domain and module applications：
Examples of applicable fields and modules:
1. Signal switch: The bidirectional conductivity of VBKB5245 makes it very suitable for use as signal switches, such as audio switches, video switches, etc.
2. Power management: In the power management module, this product can be used for power switching, battery management and other functions.
3. Current detection: Due to its bidirectional conductivity, it can be used in current detection modules, such as current limiters, current sensors, etc.
4. Power inverter: In the power inverter, VBKB5245 can be used to control the power switch to achieve DC to AC conversion.
5. Signal conditioning: It can be used in signal conditioning modules, such as electronic regulators, signal amplifiers, etc., to adjust the signal size and direction.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
