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VBK5213N Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi VBK5213N is a dual N-type and P-type channel power MOSFET manufactured using trench technology. This product has a bipolar design and is suitable for various applications that require simultaneous control of positive and negative currents. The package is SC70-6, small in size, suitable for current control circuits, power management systems, current reverse protection, signal switches and other fields and modules, providing reliable power management and signal control functions for electronic equipment.
VBsemi VBK5213N is a dual N-type and P-type channel power MOSFET manufactured using trench technology. This product has a bipolar design and is suitable for various applications that require simultaneous control of positive and negative currents. The package is SC70-6, small in size, suitable for current control circuits, power management systems, current reverse protection, signal switches and other fields and modules, providing reliable power management and signal control functions for electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC70-6 | Dual-N+P | ±20V | 20（±V） | 1.0/-1.2V | 3.28/-2.8A | 110/190(mΩ) | 90/155(mΩ) | Trench |
### Detailed parameter description
- **Product model:** VBK5213N
- **Brand:** VBsemi
- **Parameters:**
- **Type:** Dual N-type and P-type channel power MOSFET
- **Drain-Source Voltage (VDS):** ㊣20V
- **Gate-Source Voltage (VGS):** ㊣20V
- **Threshold voltage (Vth):** 1.0V (N type) / -1.2V (P type)
- **On-resistance (m次) when gate-source voltage is 2.5V:** 110 (N type) / 190 (P type)
- **On-resistance (m次) when gate-source voltage is 4.5V:** 90 (N type) / 155 (P type)
- **Drain current (ID):** 3.28A (N type) / -2.8A (P type)
- **Technology:** Trench
- **Package:** SC70-6
- **Product model:** VBK5213N
- **Brand:** VBsemi
- **Parameters:**
- **Type:** Dual N-type and P-type channel power MOSFET
- **Drain-Source Voltage (VDS):** ㊣20V
- **Gate-Source Voltage (VGS):** ㊣20V
- **Threshold voltage (Vth):** 1.0V (N type) / -1.2V (P type)
- **On-resistance (m次) when gate-source voltage is 2.5V:** 110 (N type) / 190 (P type)
- **On-resistance (m次) when gate-source voltage is 4.5V:** 90 (N type) / 155 (P type)
- **Drain current (ID):** 3.28A (N type) / -2.8A (P type)
- **Technology:** Trench
- **Package:** SC70-6
Domain and module applications：
### Examples of application areas
1. **Current control circuit:** VBK5213N can be used in current control circuits to achieve precise regulation and control of current by controlling the conduction state of N-type and P-type MOSFETs.
2. **Power management system:** In the power management system, this product can be used for charge and discharge control in the battery management circuit to help achieve efficient charging and discharging of the battery.
3. **Current reverse protection:** Since VBK5213N has a bipolar design, it can be used for current reverse protection in the circuit to prevent current from flowing into the circuit in the reverse direction and damaging the device.
4. **Signal switch:** In signal switch circuits, this product can be used for switch control and signal conditioning to help achieve accurate transmission and control of signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
