VBK1240 Product details
Product introduction:
- Maximum drain-source voltage (VDS) is 20V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is between 0.5 and 1.5;
- When the gate-source voltage is 2.5V, the on-resistance (RDS(on)) is 30mΩ;
- When the gate-source voltage is 4.5V, the on-resistance is 26mΩ;
- Maximum drain current (ID) is 5A;
- Made using Trench technology;
- Package is SC70-3.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SC70-3 | Single-N | 20V | 20(±V) | 0.5~1.5V | 5 A | 30(mΩ) | 26(mΩ) | Trench |
Brand: VBsemi
parameter:
-Single N
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 30
- RDS(on) VGS=4.5V(m次): 26
- ID (A): 5
- Technology: Trench
Package: SC70-3
Domain and module applications:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Management Modules: Due to its low on-resistance and high drain-source voltage, it is suitable for power switches and current regulators in power management modules.
- Automotive electronic modules: Can be used in power switches, motor drivers and LED light controllers in automotive electronic modules.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- Communication equipment modules: Suitable for modules such as power amplifiers, radio frequency switches and signal conditioners in communication equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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