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VBJ165R02 Product details
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**Product Introduction:**
VBsemi's VBJ165R02 is a single N-channel MOSFET, manufactured using Plannar technology and packaged in SOT223. The product features a drain-to-source voltage (VDS) of up to 650V and has low on-resistance. Suitable for a variety of power management and switching applications.
VBsemi's VBJ165R02 is a single N-channel MOSFET, manufactured using Plannar technology and packaged in SOT223. The product features a drain-to-source voltage (VDS) of up to 650V and has low on-resistance. Suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 30（±V） | 3.5V | 2A | 5000 (mΩ) | 4000 (mΩ) | Plannar |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBJ165R02
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 4.5V: 5000 m次
- On-resistance at gate-source voltage 10V: 4000 m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: SOT223
- Brand: VBsemi
- Model: VBJ165R02
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 4.5V: 5000 m次
- On-resistance at gate-source voltage 10V: 4000 m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: SOT223
Domain and module applications：
**Examples of applicable fields and modules:**
1. **Power Management Module**: VBJ165R02 is suitable for various power management modules, such as DC-DC converters, AC-DC converters and switching power supplies. Its high voltage and low on-resistance characteristics enable it to provide efficient power switching functions in power management.
2. **Automotive Electronics**: In the field of automotive electronics, this type of MOSFET can be used in modules such as engine control units (ECUs), vehicle chargers, and vehicle power management systems. Its high withstand voltage and low on-resistance characteristics make it an important component in automotive electronic systems.
3. **Industrial Control**: In the field of industrial control, VBJ165R02 can be used to control various industrial equipment and robots. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
4. **Solar Inverter**: In solar power generation systems, this type of MOSFET can be used in the power switching circuit in the solar inverter to achieve effective conversion and management of solar energy. Its high voltage resistance makes it suitable for high-voltage environments in solar power generation systems.
1. **Power Management Module**: VBJ165R02 is suitable for various power management modules, such as DC-DC converters, AC-DC converters and switching power supplies. Its high voltage and low on-resistance characteristics enable it to provide efficient power switching functions in power management.
2. **Automotive Electronics**: In the field of automotive electronics, this type of MOSFET can be used in modules such as engine control units (ECUs), vehicle chargers, and vehicle power management systems. Its high withstand voltage and low on-resistance characteristics make it an important component in automotive electronic systems.
3. **Industrial Control**: In the field of industrial control, VBJ165R02 can be used to control various industrial equipment and robots. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
4. **Solar Inverter**: In solar power generation systems, this type of MOSFET can be used in the power switching circuit in the solar inverter to achieve effective conversion and management of solar energy. Its high voltage resistance makes it suitable for high-voltage environments in solar power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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