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VBJ125N5K Product details
Back to previous pageProduct introduction：
VBJ125N5K is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:
- VDS(V): 250V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 1500mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 0.3A - Drain current
- Technology: Trench - Made using trench technology
- Package: SOT223 - SOT223 package form
VBJ125N5K MOSFET is suitable for applications requiring small power, small size and low power characteristics, including small power modules, signal amplifier modules and power management modules.
- VDS(V): 250V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 1500mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 0.3A - Drain current
- Technology: Trench - Made using trench technology
- Package: SOT223 - SOT223 package form
VBJ125N5K MOSFET is suitable for applications requiring small power, small size and low power characteristics, including small power modules, signal amplifier modules and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 20（±V） | 3V | 0.3A | 1500 (mΩ) | Trench |
Product model: VBJ125N5K
Brand: VBsemi
Parameters: Single N
VDS(V): 250
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 1500
ID(A): 0.3
Technology: Trench
Package: SOT223
Brand: VBsemi
Parameters: Single N
VDS(V): 250
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 1500
ID(A): 0.3
Technology: Trench
Package: SOT223
Domain and module applications：
VBJ125N5K is suitable for a variety of fields and modules, such as:
1. Small power module: Due to its small SOT223 package and low power characteristics, VBJ125N5K is suitable for small power modules, such as portable devices, smart sensors and low-power electronic products. Its advantages of low on-resistance and trench technology manufacturing enable it to achieve energy saving and efficient energy conversion.
2. Signal amplifier module: This device is suitable for signal amplifier modules such as audio amplifiers, sensor interface circuits and amplifiers. Its low power characteristics and stable performance enable it to work stably in the field of signal amplification and provide clear and stable signal amplification.
3. Power management module: VBJ125N5K is suitable for low-power power management modules, such as low-power DC-DC converters, battery charge management and power switch controllers. Its small package and low power characteristics make it suitable for the needs of small power management systems.
1. Small power module: Due to its small SOT223 package and low power characteristics, VBJ125N5K is suitable for small power modules, such as portable devices, smart sensors and low-power electronic products. Its advantages of low on-resistance and trench technology manufacturing enable it to achieve energy saving and efficient energy conversion.
2. Signal amplifier module: This device is suitable for signal amplifier modules such as audio amplifiers, sensor interface circuits and amplifiers. Its low power characteristics and stable performance enable it to work stably in the field of signal amplification and provide clear and stable signal amplification.
3. Power management module: VBJ125N5K is suitable for low-power power management modules, such as low-power DC-DC converters, battery charge management and power switch controllers. Its small package and low power characteristics make it suitable for the needs of small power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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