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VBI5325 Product details
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Product introduction:
VBI5325 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for a variety of electronic applications. Features a dual-channel design that enables flexible functionality in the circuit.
Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±30V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.6V (N channel) and -1.7V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 24 mΩ (N channel) and 40 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 18 mΩ (N channel) and 32 mΩ (P channel) respectively.
- ID (A): Maximum drain current is ±8A.
- Technology: Using Trench technology.
VBI5325 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for a variety of electronic applications. Features a dual-channel design that enables flexible functionality in the circuit.
Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±30V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.6V (N channel) and -1.7V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 24 mΩ (N channel) and 40 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 18 mΩ (N channel) and 32 mΩ (P channel) respectively.
- ID (A): Maximum drain current is ±8A.
- Technology: Using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 20（±V） | 1.6/-1.7V | ±8A | 24/40(mΩ) | 18/32(mΩ) | Trench |
Product model: VBI5325
Brand: VBsemi
Parameters: Dual N+P
VDS(V): ㊣30
VGS(㊣V): 20
Vth(V): 1.6/-1.7
VGS=4.5V(m次): 24/40
VGS=10V(m次): 18/32
ID (A): ㊣8
Technology: Trench
Package: SOT89-6
Brand: VBsemi
Parameters: Dual N+P
VDS(V): ㊣30
VGS(㊣V): 20
Vth(V): 1.6/-1.7
VGS=4.5V(m次): 24/40
VGS=10V(m次): 18/32
ID (A): ㊣8
Technology: Trench
Package: SOT89-6
Domain and module applications：
Examples of applicable fields and modules:
1. Power management: VBI5325 can be used in switching power supplies and power conditioning modules in power management systems to provide stable power output and efficient power conversion.
2. Electric vehicle motor drive: In the field of electric vehicles, this model can be used in electric vehicle motor driver modules to achieve power output and control of electric vehicles.
3. Industrial automation: Due to its dual-channel design and high drain current capacity, VBI5325 is suitable for motor control and circuit protection modules in industrial automation equipment to ensure stable operation and safety of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
