VBI2102M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | 20(±V) | -2V | -3A | 230 (mΩ) | 200 (mΩ) | Trench |
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) at VGS=4.5V: 230
- Drain-source resistance (m次) at VGS=10V: 200
- Maximum drain current (ID): -3A
- Technology: Trench
**Package:** SOT89
Domain and module applications:
1. Handheld electronic device modules: VBI2102M can be used for power management and power control in handheld electronic device modules, such as smartphones, tablets, etc., to ensure efficient and stable operation of the device and extend battery life.
2. LED drive module: Among the LED drive modules, VBI2102M is suitable for current regulation and drive control of LED light strips and bulbs, providing stable brightness and energy-saving effects.
3. Wireless communication module: Since VBI2102M has lower drain-source resistance and lower threshold voltage, it can be used for power amplification and signal conditioning in wireless communication modules to improve the performance and coverage of communication systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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