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VBI165R04 Product details

Product introduction:

Product introduction:
VBsemi's VBI165R04 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The device has a maximum drain-to-source resistance (RDS(on)) of 2500mΩ and a maximum drain current (ID) of 4A. The package form is SOT89.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 650V 30(±V) 3.5V 4A 2500 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 2500m次, and the maximum drain current (ID) is 4A.
- Technology: Made with Plannar technology.

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Since VBI165R04 has a high drain-source voltage and moderate drain current, it can be used in industrial power modules such as DC-DC converters or inverters.
2. LED lighting control: Its low threshold voltage and high drain-source voltage make it suitable for power switches in LED lighting control modules.
3. Automotive electronic systems: In automotive electronic systems, VBI165R04 can be used as a power switch module in the battery management system or the electric drive system of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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