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VBI1322 Product details
Back to previous pageProduct introduction：
This product is a unipolar N-channel field effect transistor with a rated drain-source voltage of 30V and a maximum drain current of 6.8A. At VGS=2.5V, the drain-source on-resistance is 30mΩ, 22mΩ at VGS=4.5V, its threshold voltage is 1.7V, and it is manufactured in trench type technology.
VBI1322 is suitable for applications requiring medium power and current, and can balance power and performance to a certain extent. Its small package and low power consumption make it suitable for electronic devices and systems that require compact structure and high performance.
VBI1322 is suitable for applications requiring medium power and current, and can balance power and performance to a certain extent. Its small package and low power consumption make it suitable for electronic devices and systems that require compact structure and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 20（±V） | 1.7V | 6.8A | 30(mΩ) | 22 (mΩ) | Trench |
Product model: VBI1322
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=2.5V: 30
- Drain-source on-resistance (m次) at VGS=4.5V: 22
- Maximum drain current (ID): 6.8A
- Technology: Trench (groove type)
Package: SOT89
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=2.5V: 30
- Drain-source on-resistance (m次) at VGS=4.5V: 22
- Maximum drain current (ID): 6.8A
- Technology: Trench (groove type)
Package: SOT89
Domain and module applications：
for example:
1. **Power Management**: VBI1322 can be used as a switching tube in the power management module to adjust the output stability and efficiency of the power supply. Due to its medium power and low power consumption characteristics, it is suitable for compact space and high performance requirements of power management systems.
2. **Vehicle Electronics**: In vehicle electronic systems, VBI1322 can be used as a switch tube for the power control module in the vehicle circuit to control the power management and stability of vehicle electronic equipment. Its small package and low power consumption improve the performance and reliability of in-vehicle electronic systems.
3. **Industrial Control**: VBI1322 can be used as a switch tube for the motor control module in an industrial control system to control the start, stop and speed adjustment of industrial equipment. Due to its medium power and low power consumption characteristics, it is suitable for the compact space and high performance requirements of industrial control systems.
To sum up, the VBI1322 field effect transistor is suitable for medium power and current applications, such as power management, automotive electronics and industrial control applications.
1. **Power Management**: VBI1322 can be used as a switching tube in the power management module to adjust the output stability and efficiency of the power supply. Due to its medium power and low power consumption characteristics, it is suitable for compact space and high performance requirements of power management systems.
2. **Vehicle Electronics**: In vehicle electronic systems, VBI1322 can be used as a switch tube for the power control module in the vehicle circuit to control the power management and stability of vehicle electronic equipment. Its small package and low power consumption improve the performance and reliability of in-vehicle electronic systems.
3. **Industrial Control**: VBI1322 can be used as a switch tube for the motor control module in an industrial control system to control the start, stop and speed adjustment of industrial equipment. Due to its medium power and low power consumption characteristics, it is suitable for the compact space and high performance requirements of industrial control systems.
To sum up, the VBI1322 field effect transistor is suitable for medium power and current applications, such as power management, automotive electronics and industrial control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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