Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT89 |
Single-N |
30V |
20（±V） |
1.7V |
8.7A |
|
18 (mΩ) |
14 (mΩ) |
Trench |
Product model: VBI1314
Brand: VBsemi
parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Static operating resistance (RDS(on)):
- When VGS=4.5V: 18m次
- When VGS=10V: 14m次
- Rated drain current (ID): 8.7A
- Technology: Trench
Package: SOT89
Domain and module applications：
Commonly found in the following fields and modules:
1. Small power management module: used in small power management modules such as portable electronic products and smart home devices to achieve efficient energy consumption and compact design.
2. LED driver module: used in LED driver modules such as LED lighting products and automotive lamps to achieve stable brightness adjustment and efficient energy conversion.
3. Low-power electronic equipment: Used in low-power electronic equipment such as portable medical equipment and smart sensors to achieve long battery life and efficient energy utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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