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VBI1202K Product details

Product introduction:

VBsemi VBI1202K is a single N-type field effect transistor product suitable for applications requiring low power and small size, including but not limited to low-power power modules, sensor interfaces, medical electronics and communication equipment, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 200V 20(±V) 3V 1A 1600 (mΩ) Trench
has the following parameters:

- VDS (drain-source voltage): 200V
- VGS (gate-source voltage): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance at VGS=10V: 1600m次
- Maximum drain current (ID): 1A
- Technology type: Trench
-Package: SOT89

Domain and module applications:

This device is suitable for some specific fields and modules. The specific applications are as follows:

1. **Low power power module**: Due to the low drain current (1A) and high drain-source resistance of VBI1202K, it is suitable for use in low-power power modules, such as switching power supply modules for portable electronic equipment. Power bank, etc.

2. **Sensor interface**: In the sensor interface circuit, VBI1202K can be used as a switch controller to control the working status of sensors, such as temperature sensors, humidity sensors, etc.

3. **Medical Electronics**: Suitable for low-power medical electronic equipment, such as portable medical monitoring instruments, medical sensors, etc.

4. **Communication equipment**: Can be used for low-power communication equipment modules, such as radio frequency power amplifier control modules, low-power communication modules, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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