VBI1201K Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 200V | 20(±V) | 3V | 2A | 800 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 800
- Drain current (ID): 2A
- Technology: Trench
Package: SOT89
Domain and module applications:
1. Power management module: Since VBI1201K has a high rated voltage and low drain current, it is suitable for small power management modules, such as portable chargers and battery management systems. In portable chargers, it can be used as a power switching device in the charging circuit to achieve battery charging and current protection functions.
2. Electronic equipment: This MOSFET can be used in power switch modules in various electronic equipment, such as laptop computers and digital cameras. Its small package and low drain-source resistance make it a compact and efficient power switching device in electronic equipment.
3. LED driver: In LED lighting systems, VBI1201K can be used as a power switching device in the LED driver circuit to realize switching and brightness adjustment of LED lights. Its high voltage rating and low drain resistance ensure LED driver stability and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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