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VBGQF1810 Product details
Back to previous pageProduct introduction：
- **Single N**: Single N-channel field effect transistor.
- **VDS(V)**: Maximum drain-source voltage is 80V.
- **VGS(±V)**: Gate-source voltage is ±20V.
- **Vth(V)**: Threshold voltage is 1.7V.
- **VGS=4.5V(mΩ)**: When the gate-source voltage is 4.5V, the on-resistance in the on state is 12.5mΩ.
- **VGS=10V(mΩ)**: When the gate-source voltage is 10V, the on-resistance in the on state is 9.5mΩ.
- **ID (A)**: Maximum drain current is 51A.
- **Technology**: Made with SGT (Super-Grain Technology) technology.
- **Package**: Use DFN8 (3X3) package.
The VBGQF1810 field effect transistor is suitable for applications requiring high performance and high efficiency capabilities, including module design in areas such as power management, power tools, and electric vehicle charging piles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 80V | 20（±V） | 1.7V | 51A | 12.5(mΩ) | 9.5(mΩ) | SGT |
Product model: VBGQF1810
Brand: VBsemi
parameter:
-Single N
- VDS(V): 80
-VGS(㊣V): 20
-Vth(V): 1.7
- VGS=4.5V(m次): 12.5
- VGS=10V(m次): 9.5
- ID(A): 51
- Technology: SGT
Package: DFN8(3X3)
Brand: VBsemi
parameter:
-Single N
- VDS(V): 80
-VGS(㊣V): 20
-Vth(V): 1.7
- VGS=4.5V(m次): 12.5
- VGS=10V(m次): 9.5
- ID(A): 51
- Technology: SGT
Package: DFN8(3X3)
Domain and module applications：
Application Introduction:
VBGQF1810 is a field effect transistor with excellent performance, suitable for various fields and modules, with the following characteristics:
1. **Power Management**: Due to its high efficiency capability and low on-resistance, VBGQF1810 can be used to design and manufacture power switches, voltage regulators and power management modules to achieve efficient power conversion and power management.
2. **Power Tools**: In power tools, high-performance power switching devices are required to drive motors and achieve power control. The high voltage and high current capabilities of the VBGQF1810 make it ideal for power tools such as power drills, power saws, etc.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, efficient and highly reliable power switching devices are needed to realize the conversion of electric energy and charging control. The performance characteristics of VBGQF1810 make it ideal for designing and manufacturing power modules for electric vehicle charging piles.
VBGQF1810 is a field effect transistor with excellent performance, suitable for various fields and modules, with the following characteristics:
1. **Power Management**: Due to its high efficiency capability and low on-resistance, VBGQF1810 can be used to design and manufacture power switches, voltage regulators and power management modules to achieve efficient power conversion and power management.
2. **Power Tools**: In power tools, high-performance power switching devices are required to drive motors and achieve power control. The high voltage and high current capabilities of the VBGQF1810 make it ideal for power tools such as power drills, power saws, etc.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, efficient and highly reliable power switching devices are needed to realize the conversion of electric energy and charging control. The performance characteristics of VBGQF1810 make it ideal for designing and manufacturing power modules for electric vehicle charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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