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VBGQF1302 Product details

Product introduction:

VBGQF1302 is a single N-type MOSFET with 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 2.75mΩ (VGS=4.5 V) and on-resistance (RDS(on)) of 1.8mΩ (VGS=10V), and drain current (ID) of 70A. It is manufactured using SGT process and is packaged in DFN8 (3X3).

Suitable for high power and high efficiency circuit design and module applications

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 20(±V) 1.7V 70A 2.75(mΩ) 1.8(mΩ) SGT
parameter:
- Single N type
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 2.75
- RDS(on) VGS=10V(m次): 1.8
- ID (A): 70
- Technology: SGT
Package: DFN8(3X3)

Domain and module applications:

Due to its high drain current and low on-resistance characteristics, VBGQF1302 is suitable for high-power and high-efficiency circuit designs and module applications. For example,
In power modules, it can be used as power switches in direct current-to-direct current (DC-DC) converters and direct current-to-alternating current (DC-AC) inverters;
In electric vehicle circuits, it can be used for charge and discharge control in battery management systems and power switches in motor drivers;
In industrial automation, it can be used in fields such as motor controllers and power switch modules.
Its high power and low on-resistance characteristics give it broad application potential in applications requiring high efficiency and high power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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