VBGQE11506 Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 150V | 20(±V) | 3.5V | 100A | 5.7(mΩ) | SGT |
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 5.7
- Maximum drain current (ID): 100A
- Technology: SGT (Silicon Gate Technology)
- Package: DFN8X8
Domain and module applications:
1. Power management module: VBGQE11506 is suitable for switching power supplies, DC-DC converters and chargers in the power management module. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while moderate threshold voltage and drain-source resistance improve conversion efficiency and reduce power consumption.
2. Automotive electronic modules: In the field of automotive electronics, VBGQE11506 can be used in modules such as vehicle power management, motor drive and lighting control. Its high voltage and current capabilities can meet the high power and high performance requirements of automotive electronic equipment, while the DFN8X8 package can meet the compact size and high-density integration requirements of automotive electronic modules.
3. Industrial automation module: In the field of industrial automation, VBGQE11506 can be used for power management, drive control and signal processing modules in industrial control systems. Its reliable performance and stable working characteristics make it an important part of industrial automation modules, improving the reliability and stability of the system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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