Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
120V |
20（±V） |
3V |
60A |
|
|
10(mΩ) |
SGT |
Product model: VBGMB1121N
Brand: VBsemi
parameter:
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 120V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- On-resistance (m次) when gate-source voltage is 10V: 10m次
- Maximum drain current (ID): 60A
- Technical features: Surface Grid Grooves (SGT)
Package: TO220F
Domain and module applications：
This product is suitable for various fields and modules, as follows:
1. **Power module**:
VBGMB1121N has high rated drain-source voltage and drain current, making it suitable for use as main switches or synchronous rectifiers in switching power supply modules, providing reliable power conversion and efficient energy transfer.
2. **Electric Vehicles**:
In electric vehicles, this product can be used as a power switch for motor drivers to achieve efficient energy conversion and reliable performance in electric vehicles, such as motor drivers or battery managers for electric vehicles.
3. **Solar Inverter**:
Due to its high voltage and current characteristics, VBGMB1121N is suitable for power switches in solar inverter modules for energy conversion and output control of solar panels.
4. **Industrial Control**:
In industrial control systems, this product can be used in various industrial control modules and drives, such as frequency converters, PLC systems and robot controllers, to achieve precise motion control and reliable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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