Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-60V |
20（±V） |
-3V |
-80A |
|
9.4(mΩ) |
7.6(mΩ) |
SGT |
Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 9.4m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 7.6m次
- Quiescent drain current (ID): -80A
Domain and module applications：
Application introduction:
VBGM2606 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as DC-DC converters, switching power supplies, etc., to provide stable and reliable power output.
2. Electric vehicles: In electric vehicles, VBGM2606 can be used in battery management systems and motor control modules to ensure high efficiency and drive control of electric vehicles.
3. Aerospace: Suitable for power management and power control modules in the aerospace field, such as satellite power systems, avionics equipment, etc., to ensure system reliability and safety.
4. Industrial high-frequency switching power supply: This MOSFET can be used in the power switch module in industrial high-frequency switching power supply to achieve efficient power conversion and stable output power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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