VBsemi brand VBM2606 is a single P-type Trench technology MOSFET, packaged in TO220. It is suitable for various fields and modules such as power management, electric vehicles, aerospace and industrial high-frequency switching power supplies, providing high-performance power switching solutions for various application scenarios.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-P | -60V | 20（±V） | -3V | -80A | 9.4(mΩ) | 7.6(mΩ) | Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 9.4(mΩ)
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 7.6(mΩ)
- Quiescent drain current (ID): -80A
Application introduction:
VBM2606 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as DC-DC converters, switching power supplies, etc., to provide stable and reliable power output.
2. Electric vehicles: In electric vehicles, VBM2606 can be used in battery management systems and motor control modules to ensure high efficiency and drive control of electric vehicles.
3. Aerospace: Suitable for power management and power control modules in the aerospace field, such as satellite power systems, avionics equipment, etc., to ensure system reliability and safety.
4. Industrial high-frequency switching power supply: This MOSFET can be used in the power switch module in industrial high-frequency switching power supply to achieve efficient power conversion and stable output power.
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