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VBGM11206 Product details
Back to previous pageProduct introduction：
VBGM11206 is a single-channel N-type field effect transistor with the following characteristics and is suitable for specific application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 120V | 20（±V） | 3.3V | 108A | 6.6(mΩ) | SGT |
parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 120V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.3V
- Drain-source resistance (m次) at VGS=10V: 6.6
- Maximum drain current (ID): 108A
- Technology: Sputter Channel
Package: TO220
Domain and module applications：
Example 1: Suitable for electric vehicle driver module
Due to its high drain current capacity and low drain-source resistance, the VBGM11206 is suitable for use as a power switching device in electric vehicle driver modules. In the electric vehicle driver module, it can be used for motor control and battery management of electric vehicles to ensure efficient operation and safety of electric vehicles.
Example 2: Applicable to industrial control module
The VBGM11206 package is high temperature resistant and is suitable for power switching devices in industrial control modules. In industrial control modules, it can be used in motor drives, frequency converters, UPS systems and other applications to achieve efficient operation and reliability of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
