VBGM11152N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 150V | 20(±V) | 3V | 60A | 21(mΩ) | SGT |
- Product Type: Single N-channel Field Effect Transistor (Single N-MOSFET)"
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance at VGS=10V (m次): 21
- Maximum drain current (ID): 60A
- Technology: SGT (Silicon Gate Technology)
- Package: TO220
Domain and module applications:
Its characteristics include high drain-source voltage and moderate drain current, as well as high drain-source resistance, making it widely used in the following fields and modules:
1. Power module: VBGM11152N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while high drain-source resistance reduces power consumption and losses.
2. Electric vehicle electronic control module: In the electric vehicle electronic control module, VBGM11152N can be used to control motor drive, battery management, charging management and other parts. Its high current and voltage capabilities can meet the high power and performance needs of electric vehicles, while the TO220 package can provide good heat dissipation performance.
3. Industrial control module: In the field of industrial control, VBGM11152N can be used for power management, drive control and power regulation modules in industrial control systems. Its reliable performance and high power processing capabilities make it an important part of industrial control modules, improving system reliability and efficiency.
Technical support:
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