VBGL1121N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 120V | 20(±V) | 3V | 70A | 8.3(mΩ) | SGT |
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 120V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 8.3m次
- Drain current (ID): 70A
- Technology: SGT (Silicon-Germanium Trench)
-Package:TO263
Domain and module applications:
1. Power inverter module:
VBGL1121N is suitable for power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supply). Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.
2. Electric vehicle drive module:
In the drive modules of electric vehicles and hybrid vehicles, VBGL1121N can be used as a power switching device to control and drive the electric motor. Its high drain current and low on-resistance can provide stable current output and ensure the safety and efficiency of electric vehicles.
3. Industrial automation control module:
In industrial automation control systems, VBGL1121N can be used in motor drive, power inverter and power conditioning applications. Its high performance and reliability can improve the efficiency and stability of industrial production and meet the needs of industrial production for high quality and high efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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