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VBGE2407 Product details

Product introduction:

The VBGE2407 is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The high performance and reliability of the VBGE2407 enable it to play an important role in a variety of industrial and consumer electronics applications.
The device is manufactured using SGT technology and comes in TO252 package.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -40V 20(±V) -2V -80A 11(mΩ) 7.2(mΩ) SGT
Has the following main parameters:

- Rated drain-source voltage (VDS): -40V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 11m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 7.2m次
- Maximum drain current (ID): -80A

Domain and module applications:

The application of SGT technology gives it excellent performance in various applications. For example,
In power management modules, VBGE2407 can be used in switching regulators, DC-DC converters and other fields. Its low on-resistance and high drain current make it particularly suitable for applications requiring high power density and efficiency, such as electric vehicle controllers, power modules, etc.
In addition, its high threshold voltage and low static power consumption also make it an ideal choice for portable electronic devices, industrial automation control systems, and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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