Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO252 |
Single-N |
100V |
20(±V) |
1.8V |
55A |
|
14.5(mΩ) |
11.5(mΩ) |
SGT |
**parameter:**
- Type: Single channel N type
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 14.5
- Drain-source resistance (m次) at VGS=10V: 11.5
- Maximum drain current (ID): 55A
- Technology: SGT (Superjunction Gate-Triggered)
-Package: TO252
Domain and module applications:
**Applicable areas and modules:**
1. **Power supply module:**
Since the VBGE1101N has high drain current and low drain-source resistance, it is very suitable for designing high-efficiency switching power supply modules. This MOSFET plays a key role in converters and inverters, enabling high power density and high-efficiency conversion.
2. **Electric vehicle charger:**
Due to its high drain current and low threshold voltage, the VBGE1101N enables efficient power conversion in electric vehicle chargers. Its reliability and performance make it ideal for electric vehicle charging systems.
3. **Industrial Motor Driver:**
In industrial applications, VBGE1101N can be used to design high-performance motor drivers for precise motor control and efficient energy conversion. Its low drain-source resistance ensures low power loss and high-efficiency operation.
4. **Solar Inverter:**
As a switching element in a solar inverter, VBGE1101N can achieve high-efficiency solar energy conversion. Its low threshold voltage and high drain current enable it to provide stable performance under a variety of lighting conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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