VBGE1101N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 20(±V) | 1.8V | 55A | 14.5(mΩ) | 11.5(mΩ) | SGT |
- Type: Single channel N type
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 14.5
- Drain-source resistance (m次) at VGS=10V: 11.5
- Maximum drain current (ID): 55A
- Technology: SGT (Superjunction Gate-Triggered)
-Package: TO252
Domain and module applications:
**Applicable areas and modules:**
1. **Power supply module:**
Since the VBGE1101N has high drain current and low drain-source resistance, it is very suitable for designing high-efficiency switching power supply modules. This MOSFET plays a key role in converters and inverters, enabling high power density and high-efficiency conversion.
2. **Electric vehicle charger:**
Due to its high drain current and low threshold voltage, the VBGE1101N enables efficient power conversion in electric vehicle chargers. Its reliability and performance make it ideal for electric vehicle charging systems.
3. **Industrial Motor Driver:**
In industrial applications, VBGE1101N can be used to design high-performance motor drivers for precise motor control and efficient energy conversion. Its low drain-source resistance ensures low power loss and high-efficiency operation.
4. **Solar Inverter:**
As a switching element in a solar inverter, VBGE1101N can achieve high-efficiency solar energy conversion. Its low threshold voltage and high drain current enable it to provide stable performance under a variety of lighting conditions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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