Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-P |
-30V |
20（±V） |
-2.5V |
-70A |
|
11 (mΩ) |
8 (mΩ) |
Trench |
**VBFB2309**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -2.5V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 11m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 8m次
- **ID (A):** Drain current: -70A
- **Technology:** Channel process
- **Package:** TO251
Domain and module applications：
**Applicable areas and module examples:**
1. **Power Management Module:** VBFB2309 is suitable for overload protection and reverse polarity protection circuits in power management modules. Its low drain-source resistance and high drain current enable it to handle high power currents efficiently, protecting circuits from overload and reverse voltage damage.
2. **Electric vehicle control module:** In the electric vehicle control module, VBFB2309 can be used to drive the power switch in the motor control circuit. Its high drain current and low drain-source resistance enable it to quickly and stably regulate the motor's power output, improving the performance and efficiency of electric vehicles.
3. **Industrial Automation Module:** In the industrial automation module, VBFB2309 can be used to control the switching circuits of high-power equipment such as solenoid valves and actuators. Its stable performance and high drain current enable it to reliably control various industrial equipment, improving production efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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