VBFB19R05S Product details
Product introduction:
VBsemi's VBFB19R05S is a single N-channel field effect transistor product with a drain-source voltage (VDS) of 900V, a drain current (ID) of 5A, and uses SJ_Multi-EPI technology. This product is packaged in TO251 and is suitable for a variety of applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 30(±V) | 3.5V | 5A | 1500 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 1500m次
- Drain current (ID): 5A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Solar inverter: VBFB19R05S is suitable for solar inverter modules, used for the conversion and output of solar power, such as home and commercial solar power systems.
2. Industrial motor control: In the field of industrial automation, this product can be used in motor control modules to achieve precise control and regulation of industrial equipment.
3. Electric vehicle charging control: This product can be used in electric vehicle charging control modules to achieve charging management and control of electric vehicles and improve charging efficiency and safety.
4. LED lighting driver: In the field of LED lighting, VBFB19R05S can be used in LED driver circuits to provide stable current output for various indoor and outdoor LED lighting equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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