VBFB18R05SE Product details
Product introduction:
VBFB18R05SE is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Deep-Trench technology and is packaged as TO251. This product has high performance and reliability and is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 30(±V) | 3.5V | 5A | 1000(mΩ) | SJ_Deep-Trench |
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 1000m次
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications:
1. Industrial power modules: Due to its high drain-source voltage and low on-resistance, VBFB18R05SE can be used in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charging piles: With high drain-source voltage and high on-resistance, it is suitable for power switches and control circuits in electric vehicle charging piles.
3. Solar inverter: suitable for power switches and DC-AC converters in solar inverters to achieve effective utilization of solar energy.
4. LED lighting: In LED lighting applications, VBFB18R05SE can be used for power switching and dimming control in LED drive circuits.
Technical support:
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