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VBFB18R02S Product details
Back to previous pageProduct introduction：
1. Product introduction:
The VBsemi brand VBFB18R02S model is a single N-channel MOSFET power device. The device has a drain-to-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 2A. Using SJ_Multi-EPI technology, the package is TO251.
The VBsemi brand VBFB18R02S model is a single N-channel MOSFET power device. The device has a drain-to-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 2A. Using SJ_Multi-EPI technology, the package is TO251.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 30（±V） | 3.5V | 2A | 2600 (mΩ) | SJ_Multi-EPI |
2. Detailed parameter description:
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) when gate-source voltage is 10V: 2600
- Drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package: TO251
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) when gate-source voltage is 10V: 2600
- Drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package: TO251
Domain and module applications：
3. Examples of application areas:
1. Industrial power module: Since VBFB18R02S has a drain-source voltage of 800V and a drain current of 2A, it is suitable for power switches and regulators in industrial power modules.
2. Solar Inverters: The high voltage and current capabilities of this device make it ideal for power conversion and power control in solar inverters.
3. Electric vehicle charging piles: The high-performance characteristics of VBFB18R02S make it suitable for power switches and current controllers in electric vehicle charging piles to ensure the stability and efficiency of the charging process.
4. LED lighting system: As a high-voltage MOSFET device, VBFB18R02S can be used for power adjustment and switching in LED lighting systems to improve the energy efficiency and stability of the system.
The above are some application examples of VBFB18R02S products in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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