VBFB17R10S Product details
Product introduction:
VBsemi's VBFB17R10S is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO251, it has high performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 30(±V) | 3.5V | 10A | 600 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 600m次
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications:
1. Power module: VBFB17R10S is suitable for power converters, switching power supplies, inverters and other modules, providing high efficiency and reliability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as on-board power management, electric vehicle charging piles and drive control.
3. Industrial control: Suitable for industrial automation control systems, motor drives, PLC control modules and other fields, providing reliable power switching solutions.
4. LED lighting: In LED lighting applications such as indoor lighting, commercial lighting, and industrial lighting, this MOSFET can be used in power factor correction (PFC) circuits and LED driving power supplies to improve efficiency and stability.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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