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VBFB16R04 Product details

Product introduction:

Product introduction:
VBsemi's VBFB16R04 model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using planar process technology and packaged in TO251, making it suitable for various application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 30(±V) 3.5V 4A 1800 (mΩ) 1440 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=4.5V: 1800
- Drain-source resistance (m次) at VGS=10V: 1440
- Drain current (ID): 4A
- Technology: Planar Technology

Domain and module applications:

Application example:
The product is suitable for multiple areas and modules, such as:
1. Power module: Due to its high drain-source voltage and low drain-source resistance, it can be used in switching power supplies and inverter modules.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial control systems: Due to its stability and reliability, it can be used as switching devices in industrial control systems.
4. LED lighting: By controlling current and voltage, high-efficiency power control can be achieved in LED lighting systems.

These are just some examples, actual application depends on specific design and requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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