VBFB16R04 Product details
Product introduction:
VBsemi's VBFB16R04 model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using planar process technology and packaged in TO251, making it suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 30(±V) | 3.5V | 4A | 1800 (mΩ) | 1440 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=4.5V: 1800
- Drain-source resistance (m次) at VGS=10V: 1440
- Drain current (ID): 4A
- Technology: Planar Technology
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
1. Power module: Due to its high drain-source voltage and low drain-source resistance, it can be used in switching power supplies and inverter modules.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial control systems: Due to its stability and reliability, it can be used as switching devices in industrial control systems.
4. LED lighting: By controlling current and voltage, high-efficiency power control can be achieved in LED lighting systems.
These are just some examples, actual application depends on specific design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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