Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
600V |
30（±V） |
3.5V |
1A |
|
8000 (mΩ) |
6400 (mΩ) |
Plannar |
Detailed parameter description:
- VDS(V): 600V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=4.5V, the drain-source resistance is 8000m次
- At VGS=10V, the drain-source resistance is 6400m次
- Maximum drain current ID is 1A
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Due to its high voltage and low drain current characteristics, VBFB16R01 can be used as a current control module in industrial power supplies.
2. Lighting controller: This MOSFET is suitable for current controllers in LED lighting systems, which can help achieve high efficiency and stability of the lighting system.
3. Electric vehicle charging piles: The high voltage and low drain resistance of VBFB16R01 make it a major component in electric vehicle charging piles, helping to improve charging efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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