VBFB16R01 Product details
Product introduction:
VBsemi's VBFB16R01 model is a single N-channel MOSFET designed for high performance and reliability. Made with Plannar technology, suitable for various applications. Packaged as TO251, easy to install and use.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 30(±V) | 3.5V | 1A | 8000 (mΩ) | 6400 (mΩ) | Plannar |
- VDS(V): 600V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=4.5V, the drain-source resistance is 8000m次
- At VGS=10V, the drain-source resistance is 6400m次
- Maximum drain current ID is 1A
Domain and module applications:
1. Industrial power module: Due to its high voltage and low drain current characteristics, VBFB16R01 can be used as a current control module in industrial power supplies.
2. Lighting controller: This MOSFET is suitable for current controllers in LED lighting systems, which can help achieve high efficiency and stability of the lighting system.
3. Electric vehicle charging piles: The high voltage and low drain resistance of VBFB16R01 make it a major component in electric vehicle charging piles, helping to improve charging efficiency and safety.
Technical support:
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