VBFB165R09S Product details
Product introduction:
VBFB165R09S is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Multi-EPI technology and has excellent performance and stability. The package form is TO251.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 9A | 500 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 500
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Industrial power module: Because VBFB165R09S has a high drain-source voltage and on-current, it is suitable for industrial power modules, such as DC regulated power supplies.
2. Electric vehicle charging piles: The high voltage and high current characteristics of this product make it suitable for switching power supply modules of electric vehicle charging piles.
3. Inverter air conditioning control module: The high performance and stability of VBFB165R09S make it an ideal choice among inverter air conditioning control modules, which can achieve efficient power regulation and control.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
Technical support:
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