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VBFB165R08SE Product details

Product introduction:

Product introduction:
VBsemi's VBFB165R08SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 8A. It adopts SJ_Deep-Trench technology and is packaged as TO251.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 30(±V) 3.5V 8A 460(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 460
- Drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO251

Domain and module applications:

Examples of application areas and modules:
1. Low-power power module: Because VBFB165R08SE has moderate drain current and low on-resistance, it is suitable for the design of low-power power modules, such as household power adapters, small LED lighting drivers, etc.
2. Industrial control system: In some industrial control systems, sensors, actuators, etc. need to be driven electrically. VBFB165R08SE can be used as a power switch module to ensure the stability and reliability of the system.
3. Automotive electronic module: TO251 package is suitable for automotive electronic module applications. VBFB165R08SE can be used for power switch modules in automotive electronic systems, such as power window control modules, vehicle chargers, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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