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VBFB165R01 Product details

Product introduction:

Product introduction:
VBsemi's VBFB165R01 is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 1A. It adopts Plannar technology and is packaged as TO251.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 30(±V) 3.5V 1A 8500 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 8500
- Drain current (ID): 1A
- Technology: Plannar
-Package:TO251

Domain and module applications:

Examples of application areas and modules:
1. Low-power power module: Because VBFB165R01 has low drain current and high on-resistance, it is suitable for the design of low-power power modules, such as portable chargers, power management modules of small electronic equipment, etc.
2. Low-voltage DC-DC converter: In low-power applications, such as low-power electronic equipment, embedded systems, etc., VBFB165R01 can be used as the power switching element of low-voltage DC-DC converter to provide stable power output.
3. Electric toy control module: Since its package is suitable for small circuit boards, VBFB165R01 can be used in electric toy control modules, such as remote control cars, aircraft, etc., to provide reliable power control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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