VBFB165R01 Product details
Product introduction:
VBsemi's VBFB165R01 is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 1A. It adopts Plannar technology and is packaged as TO251.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 1A | 8500 (mΩ) | Plannar |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 8500
- Drain current (ID): 1A
- Technology: Plannar
-Package:TO251
Domain and module applications:
1. Low-power power module: Because VBFB165R01 has low drain current and high on-resistance, it is suitable for the design of low-power power modules, such as portable chargers, power management modules of small electronic equipment, etc.
2. Low-voltage DC-DC converter: In low-power applications, such as low-power electronic equipment, embedded systems, etc., VBFB165R01 can be used as the power switching element of low-voltage DC-DC converter to provide stable power output.
3. Electric toy control module: Since its package is suitable for small circuit boards, VBFB165R01 can be used in electric toy control modules, such as remote control cars, aircraft, etc., to provide reliable power control functions.
Technical support:
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