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VBFB1302 Product details
Back to previous pageProduct introduction：
This product is a single N-type MOSFET. This MOSFET is suitable for circuits and modules that require high-performance switching.
Its main parameters include:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 3mΩ;
- When the gate-source voltage is 10V, the on-resistance is 2mΩ;
- Maximum drain current (ID) is 120A;
- Made using Trench technology;
- Packaged as TO251.
Its main parameters include:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 3mΩ;
- When the gate-source voltage is 10V, the on-resistance is 2mΩ;
- Maximum drain current (ID) is 120A;
- Made using Trench technology;
- Packaged as TO251.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 20（±V） | 1.7V | 120A | 3 (mΩ) | 2 (mΩ) | Trench |
parameter:
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 120
- Technology: Trench
Package: TO251
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 120
- Technology: Trench
Package: TO251
Domain and module applications：
Application introduction:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Inverter Module: Due to its high drain current capability and low on-resistance, it is suitable for efficient energy conversion in power inverters and driving motors.
- Electric vehicle control module: can be used for key modules such as drive control, battery management and motor control in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- High-performance power modules: Suitable for high-performance power modules that require high efficiency and high power density.
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Inverter Module: Due to its high drain current capability and low on-resistance, it is suitable for efficient energy conversion in power inverters and driving motors.
- Electric vehicle control module: can be used for key modules such as drive control, battery management and motor control in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- High-performance power modules: Suitable for high-performance power modules that require high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
